Keyphrases
Aluminum Gallium Nitride (AlGaN)
100%
III-nitride Devices
50%
Ultra-wide Bandgap
50%
High Efficiency
50%
Semiconductor Devices
13%
Electromagnetic Interference
13%
Compound Semiconductors
13%
STEM Careers
6%
Economic Impact of Climate Change
6%
Aluminum-rich
6%
Equal Access
6%
Large Electric Field
6%
Novel Semiconductors
6%
Avalanche Photodiode
6%
Optical Gating
6%
Polarization Charge
6%
Impact Ionization Coefficients
6%
Temperature Interference
6%
Semiconductor Electronics
6%
Heavily Doped
6%
High Voltage Breakdown
6%
Efficient System
6%
Aluminum Nitride Substrates
6%
Phototransistor
6%
Technology Barriers
6%
Drift Region
6%
Gallium Nitride Film
6%
Silicon-based
6%
Activation Annealing
6%
Contact Resistance
6%
Conduction Losses
6%
Global Demand
6%
Diode
6%
High Temperature Exposure
6%
Future Power Systems
6%
Access to Electricity
6%
Thermally Stable
6%
Robust System
6%
Tunneling Contact
6%
Heterogeneous Integration
6%
Low-resistance Ohmic Contacts
6%
Wafer
6%
Carrier Transport
6%
High Temperature Operation
6%
Nitrides
6%
Energy Demand
6%
Performance Limits
6%
Full Potential
6%
Societal Impact of Climate Change
6%
Surface Barrier Height
6%
Power Electronics
6%
Gallium Nitride Device
6%
Wide Band Gap Semiconductors
6%
Power Device
6%
Engineering
Nitride
100%
Engineering
50%
Compound Semiconductor
11%
Electromagnetic Interference
11%
Wide Bandgap Semiconductor
11%
Semiconductor Device
11%
Power Device
11%
Power Electronics
5%
Tasks
5%
Ohmic Contacts
5%
Conduction Loss
5%
Phototransistor
5%
Impact Ionization
5%
Avalanche Photodiode
5%
Barrier Height
5%
Interlayer
5%
Future Power System
5%
Tunnel Construction
5%
High Temperature Operations
5%