Engineering
Band Offset
50%
Conduction Band
50%
Control Interface
50%
Dislocation Density
100%
Emit Light
50%
Emitted Light
100%
Layer Thickness
50%
Material System
50%
Monolayer
50%
Output Power
50%
Quantum Efficiency
50%
Quantum Well
50%
Tunnel Construction
50%
Valence Band
100%
Keyphrases
Aluminum Gallium Nitride (AlGaN)
50%
Band Offset
16%
Coherent Light
16%
Conduction Band
8%
Conventional Laser
16%
Density-dependent Growth
16%
Device Design
8%
Diode Laser
16%
High Aluminum Content
16%
High Output Power
16%
Interface Control
8%
IR Application
100%
Laser Micromachining
16%
Layer Composition
8%
Layer Thickness
8%
Low Dislocation Density
16%
Material Properties
8%
Material System
8%
Mid-infrared
100%
Quantum Cascade Laser
50%
Quantum Efficiency
16%
Quantum Well
8%
Technological Ingredients
16%
THz Frequency
8%
Tunneling
16%
Unipolar Device
16%
Valence Band
16%
Wide Tunability
16%
Material Science
Aluminum
25%
Aluminum Nitride
50%
Band Offset
50%
Density
25%
Laser Diode
50%
Materials Property
25%
Monolayers
25%
Quantum Well
25%