Project Details
Description
? DESCRIPTION (provided by applicant): Ultrasound imaging systems require high-voltage (> 100 Vpp) excitation of transducer arrays in the trans- mission mode and low-noise amplification of echo signals in the reception mode. The system is switched back and forth between the transmission and reception modes during imaging. The currently available T/R switch implementations based on electronic components such as diodes and field-effect transistors deviate from the ideal on/off switching behavior. The common implementations of the T/R switch in ultrasound frontends are based on using a diode bridge or cross-coupled diode pair, which are not ideal as they introduces noise and distortion in the receive path and fail to completely isolate the receiver input from the transmit pulse causing some extended dead zone in the near field. The use of a MEMS switch can significantly help as MEMS switches provide a high isolation in the open state and low insertion loss in the closed state. However, these MEMS switches are often designed for specific RF applications, in which fast switching speed is not a requirement. For ultrasound frontends switching times of a few hundreds of nanoseconds are desired. We are proposing to develop a fast-switching (
Status | Finished |
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Effective start/end date | 1/5/16 → 31/8/18 |
Links | https://projectreporter.nih.gov/project_info_details.cfm?aid=9266397 |
Funding
- National Institute of Biomedical Imaging and Bioengineering: US$67,695.00
- National Institute of Biomedical Imaging and Bioengineering: US$66,890.00
ASJC Scopus Subject Areas
- Acoustics and Ultrasonics
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