Keyphrases
Applied Voltage
100%
Resistive Switching
100%
Lattice Defects
100%
Field-induced
100%
Mesoscopic Length Scale
100%
Metal Oxide
50%
Electric-field-induced
50%
Device Property
50%
Electroceramics
50%
Stoichiometry
50%
Applied Bias
50%
Current Enhancement
50%
Dynamic Evolution
50%
Memory Technologies
50%
Defect Evolution
50%
Oxide Materials
50%
DC Bias
50%
Capacitive Devices
50%
Electrical Bias
50%
Control Model
50%
Crystal Lattice
50%
Voltage-lead
50%
Defect Distribution
50%
Functional Ceramics
50%
Future Memory
50%
Defect Migration
50%
Defect Chemistry
50%
Induced Defects
50%
Microscopy Research
50%
Metallic Electrodes
50%
Higher-dimensional Lattice
50%
Electrical Transport Measurements
50%
Atomic Structure Analysis
50%
Electron Microscopy Imaging
50%
Rutile TiO2
50%
Imaging Techniques
25%
Electronic Devices
25%
Material Functionality
25%
Electron Microscopy
25%
Fundamental Science
25%
Materials Research
25%
Electron Spectroscopy
25%
Material System
25%
Leakage Current
25%
Memory Device
25%
Oxides
25%
Capacitors
25%
Oxide-based
25%
Spectroscopic Techniques
25%
Undergraduate Students
25%
Dislocation
25%
Electrical Properties
25%
Non-volatile Memory
25%
Proposed Methodology
25%
Crystal Orientation
25%
Material Science
Point Defect
100%
Metal Oxide
50%
Crystal Defect
40%
Oxide Compound
30%
Capacitor
20%
Electroceramics
20%
Functional Ceramics
20%
Electron Microscopy
10%
Titanium Dioxide
10%
Crystal Structure
10%
Atomic Structure
10%
Spectroscopy Technique
10%
Engineering
Length Scale
50%
Defects
50%
Resistive
18%
Applied Voltage
18%
Induced Defect
9%
Model Material
9%
Controlled Model
9%
Boundary Condition
9%
Crystallographic Orientation
9%
Nonvolatile Memory
9%