Keyphrases
Gallium Nitride Device
100%
P-type
100%
Gallium Nitride
100%
Solid Phase Epitaxy
87%
Highly Doped
50%
Power Device
50%
Annealing
50%
Wide Bandgap Materials
37%
P-type Dopant
37%
Device Characterization
25%
Amorphous Region
25%
High Voltage Power Supply
25%
High Current
25%
Crystalline Region
25%
P-type Doping
25%
Ion Implantation
12%
Power Electronics
12%
P-n Junction
12%
III-nitride Devices
12%
Device Physics
12%
Active Concentration
12%
Vertical Devices
12%
Transfer Line Method
12%
Recrystallization Temperature
12%
Efficiency Improvement
12%
Process Simulation
12%
Vertical Power Devices
12%
Doping Concentration
12%
Next-generation Technology
12%
Hands-on Research
12%
Undergraduate Research Experiences
12%
System Efficiency
12%
Semiconductors
12%
Diode Structures
12%
Semiconductor Technology
12%
Technological Competitiveness
12%
Low Operating Temperature
12%
Multi-task
12%
Power Electronic Systems
12%
Economic Competitiveness
12%
Solid Solubility Limit
12%
Active Dopants
12%
Ultra-wide Bandgap
12%
High Activity
12%
Layer Formation
12%
Wide Bandgap Devices
12%
Device Processing
12%
Metric Ton
12%
Crystalline Substrate
12%
Structure Structure
12%
Amorphization
12%
Wide Band Gap Semiconductors
12%
Ultra-wideband
12%
Lateral Power Device
12%
Moderate Temperature
12%
Kilowatt
12%
Device Fabrication
6%
Molecular Dynamics Simulation
6%
Review Criteria
6%
Molecular Processes
6%
Undergraduate Students
6%
High Performance
6%
Life Cycle Cost
6%
Impact Review
6%
Material Science
Gallium Nitride
100%
Solid Phase Epitaxy
70%
Power Device
60%
Doping (Additives)
40%
Crystalline Material
30%
Amorphous Material
20%
Amorphization
10%
Ion Implantation
10%
Wide Bandgap Semiconductor
10%
Nitride Compound
10%
Carbon Dioxide
10%
Process Simulation
10%
Device Fabrication
5%