Keyphrases
Accelerator-driven System
12%
Activation Mechanism
12%
Annealing
12%
Collaborative Research
12%
Contact Metal
25%
Contact Metallization
50%
Contact Resistance
25%
Dopant Activation
25%
Dopant Type
12%
Doping Concentration
25%
Electrical Transport
50%
Electrical Transport Measurements
12%
Epilayer
12%
Externally Funded Research
12%
Faculty Research
12%
Ga2O3
50%
Graduate Programs
12%
Hall Effect
25%
Hall Effect Measurement
25%
Heavily Doped
12%
Heavy Ions
25%
High School Students
25%
High School Teachers
25%
High Temperature
12%
High-temperature Furnace
25%
High-temperature Processes
25%
Implanted Ions
25%
Ion Activation
25%
Ion Implantation
50%
K-12
12%
Low Contact Resistance
12%
Low-energy Ion Implantation
25%
Magnetron Sputtering
25%
Materials Research
37%
Measuring System
25%
Metal-semiconductor-metal
12%
Metallization Process
25%
Microelectronics
12%
Multicharged Ions
50%
North Carolina
12%
Outreach Activities
12%
Rapid Thermal Annealing
25%
Research Education
12%
Research Training
12%
Selective Doping
12%
Semiconductors
12%
Service Area
25%
Silicon Carbide Power Devices
12%
Spatially Selective
12%
STEM Workers
12%
Thermal Process
50%
Thermoelectric Properties
50%
Total Metals
12%
Transport Characterization
50%
Ultra-wide Bandgap
25%
Undergraduate Students
12%
Underrepresented Students
25%
Underserved Students
12%
United States
12%
V-effect
25%
V-parameter
12%
Wide Band Gap Semiconductors
50%
Wide Bandgap
50%
Engineering
Activation Process
16%
Dopant Activation
33%
Dopant Concentration
16%
Dopants
16%
Energy Gap
100%
Gap Semiconductor
100%
High Ion Energy
16%
Implant
16%
Ion Implantation
66%
Logical Step
16%
Magnetron
33%
Major Goal
16%
Metal Contact
33%
Metallizations
33%
Microelectronics
16%
Nanometre
16%
Power Device
16%
Rapid Thermal Annealing
16%
Research Group
16%
Research Project
16%
School Student
33%
Service Area
33%
Thermal Process
100%
Ultra Wide Band
100%
Material Science
Annealing
50%
Contact Resistance
75%
Doping (Additives)
100%
Epilayers
25%
Ion Implantation
100%
Magnetron Sputtering
50%
Power Device
25%
Silicon Carbide
25%
Wide Band Gap Semiconductor
100%